Richardson RFPD RF Power Transistor D5006UK

The D5006UK is a metal gate RF silicon FET designed for high-power amplification in HF/VHF/UHF communications from 1 MHz to 200 MHz. It is housed in a ceramic package with a gold metallized flange, measuring 9.09 mm by 19.3 mm by 45.72 mm. The device offers a minimum power gain of 13 dB, a drain efficiency of 40% at 50 V and 0.7 A quiescent current, and a drain-source breakdown voltage of 125 V with a maximum power dissipation of 220 W. Thermal resistance from junction to case is 0.8 °C/W. It meets RoHS compliance. The ceramic between leads and flange contains toxic beryllium oxide, requiring careful handling to avoid dust exposure.