Richardson RFPD RF Power Transistor D2220UK

The D2220UK is a metal gate RF silicon FET in an SO8 package measuring 4.06 mm by 5.08 mm by 1.27 mm, designed for single-ended RF amplifier applications from 1 MHz to 2 GHz. It has a maximum power dissipation of 17.5 W, a drain-source breakdown voltage of 40 V, and a maximum operating junction temperature of 200°C. The device provides a minimum common source power gain of 10 dB at 5 W output, a drain efficiency of 40% at 12.5 V and 0.2 A bias, and low input, output, and reverse transfer capacitances of 24 pF, 20 pF, and 2 pF respectively at 1 MHz. Thermal resistance from junction to case is rated at a maximum of 6°C/W. It is RoHS compliant and features low noise, simple bias circuits, and high load mismatch tolerance up to 20:1 VSWR at 1 GHz.