Richardson RFPD RF Power Transistor D2208UK

Description
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
Request a Quote
Description
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The D2208UK is a DMOS RF silicon FET designed for push-pull amplifier applications in HF/VHF/UHF communications from 1 MHz to 1 GHz. It is packaged in a metal case with dimensions of 18.41 mm length, 16.51 mm width, and 6.45 mm height. The device has two drain pins and two gate pins, with the source as common. It provides a minimum power gain of 10 dB and a drain efficiency of 40% at 12.5 V and 1.6 A quiescent current. Absolute maximum ratings include 40 V drain-source breakdown voltage, ±20 V gate-source voltage, 16 A drain current, and a maximum junction temperature of 200°C. Thermal resistance from junction to case is 1.3°C/W. The device is RoHS compliant. A hazardous ceramic component containing beryllium oxide is present between the leads and metal flange, requiring careful handling to avoid dust exposure.

Datasheet Summary
Powered by GS/AI

The D2208UK is a DMOS RF silicon FET designed for push-pull amplifier applications in HF/VHF/UHF communications from 1 MHz to 1 GHz. It is packaged in a metal case with dimensions of 18.41 mm length, 16.51 mm width, and 6.45 mm height. The device has two drain pins and two gate pins, with the source as common. It provides a minimum power gain of 10 dB and a drain efficiency of 40% at 12.5 V and 1.6 A quiescent current. Absolute maximum ratings include 40 V drain-source breakdown voltage, ±20 V gate-source voltage, 16 A drain current, and a maximum junction temperature of 200°C. Thermal resistance from junction to case is 1.3°C/W. The device is RoHS compliant. A hazardous ceramic component containing beryllium oxide is present between the leads and metal flange, requiring careful handling to avoid dust exposure.

Suppliers

Company
Product
Description
Supplier Links
RF Power Transistor - D2208UK - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
D2208UK
RF Power Transistor D2208UK
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF MOSFET Transistors
Product Number D2208UK
Product Name RF Power Transistor
Output Power 40 watts
Unlock Full Specs
to access all available technical data

Similar Products

RF Power Transistor - D5001UK - Richardson RFPD
Specs
Output Power 20 watts
Power Gain 16 dB
Operating Frequency 1 to 175 MHz
View Details
RF Power Transistor - D2081UK.F - Richardson RFPD
Specs
Output Power 0.7500 watts
Power Gain 11 dB
Operating Frequency 1 to 1000 MHz
View Details
RF Power Transistor - D2210UK - Richardson RFPD
Specs
Output Power 20 watts
Power Gain 10 dB
Operating Frequency 1 to 500 MHz
View Details
RF Power Transistor - D5030UK - Richardson RFPD
Specs
Output Power 400 watts
Power Gain 16 dB
Operating Frequency 1 to 175 MHz
View Details