Richardson RFPD RF Power Transistor D2205UK

The D2205UK is a silicon RF DMOS field-effect transistor designed for VHF/UHF broadband amplification up to 1 GHz. It is housed in a metal case measuring 16.51 mm by 6.35 mm with a 45° beveled edge, and features a gold-metallized flange. The device has a maximum power dissipation of 35 W, a drain-source breakdown voltage of 40 V, and a maximum junction temperature of 200°C. It offers a minimum common-source power gain of 10 dB and a drain efficiency of 40% at 12.5 V and 0.6 A. Input, output, and reverse transfer capacitances are 36 pF, 30 pF, and 3 pF respectively at 1 MHz. Thermal resistance from junction to case is 5°C/W. The part is RoHS compliant but contains beryllium oxide in the ceramic substrate, requiring careful handling. It meets no specified industry standards beyond RoHS compliance.