Richardson RFPD RF Power Transistor D2020UK

The D2020UK is a silicon RF DMOS transistor for broadband amplification from 1 MHz to 1 GHz in HF/VHF/UHF communications. Packaged in an SO8 case measuring 5.08 mm by 4.06 mm, it supports a 65 V drain-source breakdown voltage, ±20 V gate-source voltage, and 2 A drain current. It delivers minimum 13 dB power gain at 5 W output and 40% drain efficiency at 28 V and 0.4 A. Input and output capacitances are 24 pF and 12 pF at 1 MHz. Thermal resistance from junction to case is 6°C/W. The device is RoHS compliant with a maximum junction temperature of 200°C and 30 W power dissipation.