Richardson RFPD RF Power Transistor D2013UK

The D2013UK is a metal gate RF silicon FET designed for broadband amplifier applications from 1 MHz to 2 GHz. It is housed in a ceramic package with a metal flange, measuring 18.41 mm in length, 6.47 mm in width, and 6.45 mm in height. The device supports a maximum drain-source breakdown voltage of 65 V, a gate-source breakdown voltage of ±20 V, and a continuous drain current of 4 A per side. It delivers a minimum power gain of 10 dB at 20 W output power and 40% drain efficiency at 28 V drain voltage. The thermal resistance from junction to case is 2.1°C/W. The ceramic portion contains beryllium oxide, requiring careful handling to avoid dust exposure.