Richardson RFPD RF Power Transistor D1040UK

The D1040UK is a metal gate RF silicon FET designed for VHF FM communications and broadband applications, operating at 108 MHz with a maximum output power of 400 W at 28 V. It features a push-pull configuration with a minimum gain of 16 dB and drain efficiency up to 65%. The device is housed in a Through-Hole package measuring 45.72 mm by 19.05 mm, with a maximum junction temperature of 200°C and a thermal resistance of 0.4°C/W. Drain-source breakdown voltage is 70 V per side, with a maximum drain current of 35 A. The ceramic substrate contains beryllium oxide, requiring careful handling. Input capacitance is 380 pF, output capacitance is 180 pF, and reverse transfer capacitance is 10 pF at 1 MHz.