Richardson RFPD RF Power Transistor D1034UK

The D1034UK is a metal gate RF silicon FET designed for push-pull amplifier applications in HF/VHF/UHF communications from 1 MHz to 500 MHz. It is housed in a ceramic package with a gold metallized flange, measuring 9.14 mm × 12.70 mm × 19.05 mm. The device supports a maximum drain-source voltage of 70 V, a continuous drain current of 10 A per side, and a maximum junction temperature of 200°C. It provides a minimum power gain of 13 dB at 400 MHz with 50% drain efficiency under 28 V operation and 80 W output power. The transistor features low input, output, and reverse transfer capacitances of 120 pF, 60 pF, and 5 pF respectively at 1 MHz. It is RoHS compliant and contains beryllium oxide in the ceramic insulator, requiring careful handling. Thermal resistance from junction to case is 1°C/W.