Richardson RFPD RF Power Transistor D1029UK

The D1029UK is a metal gate RF silicon FET designed for VHF/UHF communications from 1 MHz to 200 MHz, featuring a push-pull configuration with dual drain and dual gate connections. It is housed in a ceramic package with a metal flange, measuring 19.05 mm by 10.77 mm by 5.71 mm. The device supports a maximum power dissipation of 438 W, a drain-source breakdown voltage of 70 V, and a maximum junction temperature of 200°C. It provides a minimum common source power gain of 13 dB at 350 W output power and 65% drain efficiency at 28 V and 2 A quiescent current. The input capacitance is 420 pF, output capacitance is 210 pF, and reverse transfer capacitance is 17.5 pF at 1 MHz. Thermal resistance from junction to case is 0.4°C/W. The ceramic portion contains beryllium oxide, requiring careful handling. The part is RoHS compliant.