Richardson RFPD mmW Power Amplifier CHA8362-99F/00

Description
The CHA8362-99F is a three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of power added efficiency. The typical power supply is 25V/440mA (quiescent current). The amplifier exhibits more than 25dB small signal gain. The CHA8362-99F has been optimized for Ka-Band satcom applications. The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in bare die form. The input and output are matched to 50 Ohm and the input integrates an ESD RF protection.
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Description
The CHA8362-99F is a three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of power added efficiency. The typical power supply is 25V/440mA (quiescent current). The amplifier exhibits more than 25dB small signal gain. The CHA8362-99F has been optimized for Ka-Band satcom applications. The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in bare die form. The input and output are matched to 50 Ohm and the input integrates an ESD RF protection.
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mmW Power Amplifier - CHA8362-99F/00 - Richardson RFPD
Downers Grove, IL, United States
mmW Power Amplifier
CHA8362-99F/00
mmW Power Amplifier CHA8362-99F/00
The CHA8362-99F is a three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of power added efficiency. The typical power supply is 25V/440mA (quiescent current). The amplifier exhibits more than 25dB small signal gain. The CHA8362-99F has been optimized for Ka-Band satcom applications. The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in bare die form. The input and output are matched to 50 Ohm and the input integrates an ESD RF protection.

The CHA8362-99F is a three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of power added efficiency. The typical power supply is 25V/440mA (quiescent current). The amplifier exhibits more than 25dB small signal gain. The CHA8362-99F has been optimized for Ka-Band satcom applications. The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in bare die form. The input and output are matched to 50 Ohm and the input integrates an ESD RF protection.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA8362-99F/00
Product Name mmW Power Amplifier
Amplifier Type Power Amplifier
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