Richardson RFPD mmW Power Amplifier CHA8107-QCB/20

Description
The CHA8107-QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band. This HPA operates with a drain voltage from 14V to 24V. Depending on the applied drain voltage, this HPA provides between 8W and 20W of saturated output power associated with 58% Power Added Efficiency on average across the frequency band. Designed for Radar application, it is also ideal for a wide range of microwave systems. The product is developed on a robust GaN-on-SiC HEMT process with humidity protection and is available in a QFN plastic package.
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Description
The CHA8107-QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band. This HPA operates with a drain voltage from 14V to 24V. Depending on the applied drain voltage, this HPA provides between 8W and 20W of saturated output power associated with 58% Power Added Efficiency on average across the frequency band. Designed for Radar application, it is also ideal for a wide range of microwave systems. The product is developed on a robust GaN-on-SiC HEMT process with humidity protection and is available in a QFN plastic package.
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Suppliers

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Description
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mmW Power Amplifier - CHA8107-QCB/20 - Richardson RFPD
Downers Grove, IL, United States
mmW Power Amplifier
CHA8107-QCB/20
mmW Power Amplifier CHA8107-QCB/20
The CHA8107-QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band. This HPA operates with a drain voltage from 14V to 24V. Depending on the applied drain voltage, this HPA provides between 8W and 20W of saturated output power associated with 58% Power Added Efficiency on average across the frequency band. Designed for Radar application, it is also ideal for a wide range of microwave systems. The product is developed on a robust GaN-on-SiC HEMT process with humidity protection and is available in a QFN plastic package.

The CHA8107-QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band. This HPA operates with a drain voltage from 14V to 24V. Depending on the applied drain voltage, this HPA provides between 8W and 20W of saturated output power associated with 58% Power Added Efficiency on average across the frequency band.

Designed for Radar application, it is also ideal for a wide range of microwave systems. The product is developed on a robust GaN-on-SiC HEMT process with humidity protection and is available in a QFN plastic package.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA8107-QCB/20
Product Name mmW Power Amplifier
Amplifier Type Power Amplifier
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