Richardson RFPD mmW Power Amplifier CHA6682-98F/00

Description
The CHA6682-98F is a three stage High Power Amplifier operating between 24 and 27.5GHz with integrated power detectors that provides 5W of saturated output power with 32% of Power Added Efficiency. The CHA6682-99F exhibits more than 25dB small signal gain with a typical power supply of 20V/115mA quiescent current. This High Power Amplifier is dedicated to telecommunication applications and well suited for a wide range of microwave applications and systems. The circuit is manufactured on a robust GaN on SiC HEMT process and is available as a bare die with BCB protection layer. The input and output are matched to 50 Ohm and the devices includes integrated ESD RF protection.
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Description
The CHA6682-98F is a three stage High Power Amplifier operating between 24 and 27.5GHz with integrated power detectors that provides 5W of saturated output power with 32% of Power Added Efficiency. The CHA6682-99F exhibits more than 25dB small signal gain with a typical power supply of 20V/115mA quiescent current. This High Power Amplifier is dedicated to telecommunication applications and well suited for a wide range of microwave applications and systems. The circuit is manufactured on a robust GaN on SiC HEMT process and is available as a bare die with BCB protection layer. The input and output are matched to 50 Ohm and the devices includes integrated ESD RF protection.
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Suppliers

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mmW Power Amplifier - CHA6682-98F/00 - Richardson RFPD
Downers Grove, IL, United States
mmW Power Amplifier
CHA6682-98F/00
mmW Power Amplifier CHA6682-98F/00
The CHA6682-98F is a three stage High Power Amplifier operating between 24 and 27.5GHz with integrated power detectors that provides 5W of saturated output power with 32% of Power Added Efficiency. The CHA6682-99F exhibits more than 25dB small signal gain with a typical power supply of 20V/115mA quiescent current. This High Power Amplifier is dedicated to telecommunication applications and well suited for a wide range of microwave applications and systems. The circuit is manufactured on a robust GaN on SiC HEMT process and is available as a bare die with BCB protection layer. The input and output are matched to 50 Ohm and the devices includes integrated ESD RF protection.

The CHA6682-98F is a three stage High Power Amplifier operating between 24 and 27.5GHz with integrated power detectors that provides 5W of saturated output power with 32% of Power Added Efficiency. The CHA6682-99F exhibits more than 25dB small signal gain with a typical power supply of 20V/115mA quiescent current. This High Power Amplifier is dedicated to telecommunication applications and well suited for a wide range of microwave applications and systems. The circuit is manufactured on a robust GaN on SiC HEMT process and is available as a bare die with BCB protection layer. The input and output are matched to 50 Ohm and the devices includes integrated ESD RF protection.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA6682-98F/00
Product Name mmW Power Amplifier
Amplifier Type Power Amplifier
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