Richardson RFPD mmW LNA CHA3688AQDG/20

Description
The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in lead-free package.
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Description
The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in lead-free package.
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Suppliers

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Downers Grove, IL, United States
The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in lead-free package.

The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in lead-free package.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA3688AQDG/20
Product Name mmW LNA
Amplifier Type Low Noise Amplifier
Frequency Range 12500 to 30000 MHz
Maximum Gain 26 dB
Output Power 14 dBm
Noise Figure 2.2 dB
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