Richardson RFPD Silicon Carbide MOSFET Modules CAS300M12BM2

Description
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, fail-safe device operation Ease of paralleling Copper baseplate and aluminum nitride insulator System Benefits Enables compact and lightweight systems High efficiency operation Mitigates over-voltage protection Reduces thermal requirements Enables simplified topologies Applications Induction Heating Motor Drives Solar and Wind Inverters UPS and SMPS Traction
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Description
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, fail-safe device operation Ease of paralleling Copper baseplate and aluminum nitride insulator System Benefits Enables compact and lightweight systems High efficiency operation Mitigates over-voltage protection Reduces thermal requirements Enables simplified topologies Applications Induction Heating Motor Drives Solar and Wind Inverters UPS and SMPS Traction
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CAS300M12BM2 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAS300M12BM2
Silicon Carbide MOSFET Modules CAS300M12BM2
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, fail-safe device operation Ease of paralleling Copper baseplate and aluminum nitride insulator System Benefits Enables compact and lightweight systems High efficiency operation Mitigates over-voltage protection Reduces thermal requirements Enables simplified topologies Applications Induction Heating Motor Drives Solar and Wind Inverters UPS and SMPS Traction

1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module

Module Features

  • Ultra Low Loss
  • High-Frequency Operation
  • Zero Reverse Recovery Current from Diode
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, fail-safe device operation
  • Ease of paralleling
  • Copper baseplate and aluminum nitride insulator

System Benefits

  • Enables compact and lightweight systems
  • High efficiency operation
  • Mitigates over-voltage protection
  • Reduces thermal requirements
  • Enables simplified topologies

Applications

  • Induction Heating
  • Motor Drives
  • Solar and Wind Inverters
  • UPS and SMPS
  • Traction
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CAS300M12BM2
Product Name Silicon Carbide MOSFET Modules
Package Type 62x106
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