Richardson RFPD Silicon Carbide MOSFET Modules CAB008A12GM3

Description
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost
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Description
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CAB008A12GM3 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAB008A12GM3
Silicon Carbide MOSFET Modules CAB008A12GM3
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost

Features

  • Ultra-Low Loss
  • High Frequency Operation
  • Zero Turn-Off Tail Current from MOSFET
  • Normally-Off, Fail-Safe Device Operation

Applications

  • EV Chargers
  • Solar
  • High-Efficiency Converters / Inverters
  • Motor and Traction Drives
  • Smart-Grid / Grid-Tied Distributed Generation

Benefits

  • Enables Compact, Lightweight Systems
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • Reduced Thermal Requirements and System Cost
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CAB008A12GM3
Product Name Silicon Carbide MOSFET Modules
Package Type GM3
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