The C3M0280090D is a silicon carbide N-channel enhancement mode MOSFET designed for high-efficiency power conversion in applications such as renewable energy, telecom power supplies, and induction heating. It is packaged in a TO-247-3 case with a mounting torque of 1 Nm. The device has a drain-source voltage rating of 900 V, a continuous drain current of 6.8 A at 100°C, and an on-state resistance of 320 mΩ at 25°C. It supports a maximum junction temperature of 150°C and a solder temperature of 260°C. Thermal resistance from junction to case is 2.8 °C/W. The part is RoHS compliant and halogen-free.
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
Features
Benefits
Applications
| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0280090D |
| Product Name | Silicon Carbide MOSFETs |
| rDS(on) | 0.2800 ohms |
