Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features
3rd Generation SiC MOSFET technology
Low inductance package with separate driver source pin
7mm of creepage distance between drain and source
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Easy to parallel and simple to drive
Enable new hard switching PFC topologies (Totem-Pole)
Applications
EV charging
Server power supplies
Solar PV inverters
UPS
DC/DC converters
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features
- 3rd Generation SiC MOSFET technology
- Low inductance package with separate driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS compliant
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Easy to parallel and simple to drive
- Enable new hard switching PFC topologies (Totem-Pole)
Applications
- EV charging
- Server power supplies
- Solar PV inverters
- UPS
- DC/DC converters
