Features
Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged
SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance: Symmetrical design
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Low Profile
RoHS compliant
Applications
Switched mode power supplies
Uninterruptible power supplies
Motor control
Request a Quote
Email Supplier
Description
Features
Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged
SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance: Symmetrical design
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Low Profile
RoHS compliant
Applications
Switched mode power supplies
Uninterruptible power supplies
Motor control
Request a Quote
Email Supplier
Datasheet
Datasheet Summary Powered by GS/AI
APTM100A13SCG is a silicon carbide/silicon hybrid power module for motor control and switched-mode power supplies, featuring a 1000 V MOSFET with 130 mΩ typical on-resistance at 25°C and a parallel SiC Schottky diode. It is packaged in an SP6 module with M5 power connectors, designed for direct heatsink mounting, and measures 300 g in weight. The MOSFET supports 65 A continuous drain current at 25°C case temperature, with a peak pulsed current of 240 A and a maximum power dissipation of 1250 W at 25°C. The SiC diode handles 120 A DC forward current and has a forward voltage of 2.2 V at 240 A. Thermal resistance from junction to case is 0.1 °C/W for the MOSFET and 0.35 °C/W for the diode. The module includes a Kelvin source, features very low stray inductance, and is RoHS compliant.
Datasheet Summary Powered by GS/AI
APTM100A13SCG is a silicon carbide/silicon hybrid power module for motor control and switched-mode power supplies, featuring a 1000 V MOSFET with 130 mΩ typical on-resistance at 25°C and a parallel SiC Schottky diode. It is packaged in an SP6 module with M5 power connectors, designed for direct heatsink mounting, and measures 300 g in weight. The MOSFET supports 65 A continuous drain current at 25°C case temperature, with a peak pulsed current of 240 A and a maximum power dissipation of 1250 W at 25°C. The SiC diode handles 120 A DC forward current and has a forward voltage of 2.2 V at 240 A. Thermal resistance from junction to case is 0.1 °C/W for the MOSFET and 0.35 °C/W for the diode. The module includes a Kelvin source, features very low stray inductance, and is RoHS compliant.
Features
Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged
SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance: Symmetrical design
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Low Profile
RoHS compliant
Applications
Switched mode power supplies
Uninterruptible power supplies
Motor control
Features
Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged
SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance: Symmetrical design
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
