Richardson RFPD Power FREDFET Transistor APT30M19JVFR

Description
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
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Description
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Request a Quote

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Power FREDFET Transistor - APT30M19JVFR - Richardson RFPD
Downers Grove, IL, United States
Power FREDFET Transistor
APT30M19JVFR
Power FREDFET Transistor APT30M19JVFR
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

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Technical Specifications

  Richardson RFPD
Product Category Transistors
Product Number APT30M19JVFR
Product Name Power FREDFET Transistor
Transistor Type Power FREDFET Transistor
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