Richardson RFPD Power FREDFET Transistor APT12067JFLL

Description
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
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Description
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
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Datasheet
Datasheet Summary
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APT12067JFLL is a 1200V, 17A N-channel enhancement mode Power MOSFET designed for high-voltage switching applications with low conduction and switching losses. It is packaged in a SOT-227 (ISOTOP®) case with dimensions of 31.7 mm × 15.1 mm × 4.9 mm. The device features a drain-source on-state resistance of 0.670 Ω at 25°C, total gate charge of 150 nC, and a repetitive avalanche energy rating of 50 mJ. It has a junction-to-case thermal impedance of 0.27 °C/W and an operating junction temperature range from -55°C to 150°C. The package meets UL 94 V-0 flammability requirements and includes a fast recovery body diode with reverse recovery charge of 2.0 µC at 25°C and 6.0 µC at 125°C.

Datasheet Summary
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APT12067JFLL is a 1200V, 17A N-channel enhancement mode Power MOSFET designed for high-voltage switching applications with low conduction and switching losses. It is packaged in a SOT-227 (ISOTOP®) case with dimensions of 31.7 mm × 15.1 mm × 4.9 mm. The device features a drain-source on-state resistance of 0.670 Ω at 25°C, total gate charge of 150 nC, and a repetitive avalanche energy rating of 50 mJ. It has a junction-to-case thermal impedance of 0.27 °C/W and an operating junction temperature range from -55°C to 150°C. The package meets UL 94 V-0 flammability requirements and includes a fast recovery body diode with reverse recovery charge of 2.0 µC at 25°C and 6.0 µC at 125°C.

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Power FREDFET Transistor - APT12067JFLL - Richardson RFPD
Downers Grove, IL, United States
Power FREDFET Transistor
APT12067JFLL
Power FREDFET Transistor APT12067JFLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Transistors
Product Number APT12067JFLL
Product Name Power FREDFET Transistor
Transistor Type Power FREDFET Transistor
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