Richardson RFPD RF & MW Power Amplifier ADPA7008AEHZ-R7

Description
The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic highelectron mobility transistor (pHEMT), monolithic microwave integratedcircuit (MMIC), 31 dBm saturated output power (PSAT, 1 W)distributed power amplifier with an integrated temperature compensatedon-chip power detector that operates from 20 GHz to 54GHz. The amplifier provides 17.5 dB of small signal gain, an outputpower for 1 dB compression (P1dB) of 30 dBm with an excellentIP3 of 37 dBm typical from 22 GHz to 40 GHz. The ADPA7008is ideal for linear applications such as electronic countermeasureand instrumentation applications requiring 31 dBm of efficient PSAT.The ADPA7008 requires 1500 mA from a 5 V supply voltage (VDD).The RF input and outputs are internally matched and dc blocked forease of integration into higher level assemblies. The ADPA7008 ishoused in a 7 mm x 7 mm, ceramic leadless package with heat sink[LCC_HS] that exhibits low thermal resistance and is compatiblewith surface-mount manufacturing techniques.
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Description
The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic highelectron mobility transistor (pHEMT), monolithic microwave integratedcircuit (MMIC), 31 dBm saturated output power (PSAT, 1 W)distributed power amplifier with an integrated temperature compensatedon-chip power detector that operates from 20 GHz to 54GHz. The amplifier provides 17.5 dB of small signal gain, an outputpower for 1 dB compression (P1dB) of 30 dBm with an excellentIP3 of 37 dBm typical from 22 GHz to 40 GHz. The ADPA7008is ideal for linear applications such as electronic countermeasureand instrumentation applications requiring 31 dBm of efficient PSAT.The ADPA7008 requires 1500 mA from a 5 V supply voltage (VDD).The RF input and outputs are internally matched and dc blocked forease of integration into higher level assemblies. The ADPA7008 ishoused in a 7 mm x 7 mm, ceramic leadless package with heat sink[LCC_HS] that exhibits low thermal resistance and is compatiblewith surface-mount manufacturing techniques.
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RF & MW Power Amplifier - ADPA7008AEHZ-R7 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
ADPA7008AEHZ-R7
RF & MW Power Amplifier ADPA7008AEHZ-R7
The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic highelectron mobility transistor (pHEMT), monolithic microwave integratedcircuit (MMIC), 31 dBm saturated output power (PSAT, 1 W)distributed power amplifier with an integrated temperature compensatedon-chip power detector that operates from 20 GHz to 54GHz. The amplifier provides 17.5 dB of small signal gain, an outputpower for 1 dB compression (P1dB) of 30 dBm with an excellentIP3 of 37 dBm typical from 22 GHz to 40 GHz. The ADPA7008is ideal for linear applications such as electronic countermeasureand instrumentation applications requiring 31 dBm of efficient PSAT.The ADPA7008 requires 1500 mA from a 5 V supply voltage (VDD).The RF input and outputs are internally matched and dc blocked forease of integration into higher level assemblies. The ADPA7008 ishoused in a 7 mm x 7 mm, ceramic leadless package with heat sink[LCC_HS] that exhibits low thermal resistance and is compatiblewith surface-mount manufacturing techniques.

The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic highelectron mobility transistor (pHEMT), monolithic microwave integratedcircuit (MMIC), 31 dBm saturated output power (PSAT, 1 W)distributed power amplifier with an integrated temperature compensatedon-chip power detector that operates from 20 GHz to 54GHz. The amplifier provides 17.5 dB of small signal gain, an outputpower for 1 dB compression (P1dB) of 30 dBm with an excellentIP3 of 37 dBm typical from 22 GHz to 40 GHz. The ADPA7008is ideal for linear applications such as electronic countermeasureand instrumentation applications requiring 31 dBm of efficient PSAT.The ADPA7008 requires 1500 mA from a 5 V supply voltage (VDD).The RF input and outputs are internally matched and dc blocked forease of integration into higher level assemblies. The ADPA7008 ishoused in a 7 mm x 7 mm, ceramic leadless package with heat sink[LCC_HS] that exhibits low thermal resistance and is compatiblewith surface-mount manufacturing techniques.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number ADPA7008AEHZ-R7
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 20000 to 54000 MHz
Maximum Gain 17.5 dB
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