Richardson RFPD RF & MW LNA ADL8106ACEZ-R7

Description
The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. All the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small and compact printed circuit board (PCB) footprint. The ADL8106 provides a gain of 21.5 dB, an output power for 1 dB compression (OP1dB) of 14.5 dBm, and a typical output third-order intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106 requires 120 mA from a 3 V supply voltage (VDDx). The ADL8106 is housed in a 5.00 mm x 5.00 mm, 24-terminal chip array small outline no lead cavity (LGA_CAV) package.
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Description
The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. All the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small and compact printed circuit board (PCB) footprint. The ADL8106 provides a gain of 21.5 dB, an output power for 1 dB compression (OP1dB) of 14.5 dBm, and a typical output third-order intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106 requires 120 mA from a 3 V supply voltage (VDDx). The ADL8106 is housed in a 5.00 mm x 5.00 mm, 24-terminal chip array small outline no lead cavity (LGA_CAV) package.
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RF & MW LNA - ADL8106ACEZ-R7 - Richardson RFPD
Downers Grove, IL, United States
RF & MW LNA
ADL8106ACEZ-R7
RF & MW LNA ADL8106ACEZ-R7
The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. All the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small and compact printed circuit board (PCB) footprint. The ADL8106 provides a gain of 21.5 dB, an output power for 1 dB compression (OP1dB) of 14.5 dBm, and a typical output third-order intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106 requires 120 mA from a 3 V supply voltage (VDDx). The ADL8106 is housed in a 5.00 mm x 5.00 mm, 24-terminal chip array small outline no lead cavity (LGA_CAV) package.

The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 18 GHz to 54 GHz. All the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small and compact printed circuit board (PCB) footprint.

The ADL8106 provides a gain of 21.5 dB, an output power for 1 dB compression (OP1dB) of 14.5 dBm, and a typical output third-order intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106 requires 120 mA from a 3 V supply voltage (VDDx). The ADL8106 is housed in a 5.00 mm x 5.00 mm, 24-terminal chip array small outline no lead cavity (LGA_CAV) package.

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Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number ADL8106ACEZ-R7
Product Name RF & MW LNA
Amplifier Type Low Noise Amplifier
Frequency Range 18000 to 54000 MHz
Maximum Gain 21.5 dB
Output Power 14.5 dBm
Noise Figure 3.5 dB
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