Overview
Gate driver 2CG010BBC12N is a dual channel gate driver designed for IGBT and SiC MOSFET. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT.
Features
Ideal for drive of IGBT and SiC MOSFET
Gate voltage : +15V/-15V
ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit)
Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise
Fast response : about 100nsec(typ)
Applications
Industrial inverter, power conditioner
Overview
Gate driver 2CG010BBC12N is a dual channel gate driver designed for IGBT and SiC MOSFET. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT.
Features
- Ideal for drive of IGBT and SiC MOSFET
- Gate voltage : +15V/-15V
- ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit)
- Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise
- Fast response : about 100nsec(typ)
Applications
- Industrial inverter, power conditioner
