NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to the flange, designed for common base class-B broadband amplifiers in military and professional applications. It operates up to 1.8 GHz with a collector-emitter voltage rating of 15 V, collector current of 4 A, and total power dissipation of 45 W at 75°C mounting base temperature. Thermal resistance from junction to mounting base is 2.2 K/W. The device contains beryllium oxide and must be handled and disposed of according to safety regulations for toxic materials. It meets IEC 134 Absolute Maximum Rating System standards.
RF TRANS NPN 15V 1.6GHZ CDFM2
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | PZ1418B30U,114 |
| Product Name | Bipolar RF Transistors |
| Polarity | NPN; NPN |
| Package Type | SOT-443A |
| IC(max) | 4000 milliamps |
| VCEO | 15 volts |
