LDMOS power transistor for S-band radar applications from 2700 MHz to 3100 MHz, rated at 400 W output power, 32 V drain-source voltage, and 47% drain efficiency. Packaged in a flanged ceramic case (SOT502A) with integrated dual-sided ESD protection and internally matched inputs. Capable of withstanding a VSWR of 10:1 under pulsed operation. Operating junction temperature up to 225 °C.
RF Mosfet LDMOS 32V 400mA 2.7GHz ~ 3.1GHz 13dB 400W SOT502A
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1603-BLS9G2731L-400U-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | SOT-502A |
