Ampleon RF FETs, MOSFETs BLM7G1822S-20PBGYZ

Description
RF FET LDMOS 65V 32.3DB SOT12121
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Description
RF FET LDMOS 65V 32.3DB SOT12121
Request a Quote
Datasheet
Datasheet Summary
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The BLM7G1822S-20PBG is a dual-section, 2-stage LDMOS power MMIC designed for broadband operation from 1805 MHz to 2170 MHz, used as a driver or final amplifier in multi-carrier GSM, W-CDMA, and LTE base stations. It is packaged in a 16-lead SOT1212-3 plastic heatsink small outline with an exposed ground flange. The device features integrated temperature-compensated bias, on-chip matching, and ESD protection, with a maximum junction temperature of 225°C and drain-source voltage rating of 65 V. It achieves 32.3 dB power gain and 23% drain efficiency at 2167.5 MHz under 3GPP W-CDMA test conditions, and offers exceeding 28.5 dB section-to-section isolation.

Datasheet Summary
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The BLM7G1822S-20PBG is a dual-section, 2-stage LDMOS power MMIC designed for broadband operation from 1805 MHz to 2170 MHz, used as a driver or final amplifier in multi-carrier GSM, W-CDMA, and LTE base stations. It is packaged in a 16-lead SOT1212-3 plastic heatsink small outline with an exposed ground flange. The device features integrated temperature-compensated bias, on-chip matching, and ESD protection, with a maximum junction temperature of 225°C and drain-source voltage rating of 65 V. It achieves 32.3 dB power gain and 23% drain efficiency at 2167.5 MHz under 3GPP W-CDMA test conditions, and offers exceeding 28.5 dB section-to-section isolation.

Suppliers

Company
Product
Description
Supplier Links
RF FETs, MOSFETs - 1603-BLM7G1822S-20PBGYZTR-ND - DigiKey
Thief River Falls, MN, United States
RF FET LDMOS 65V 32.3DB SOT12121

RF FET LDMOS 65V 32.3DB SOT12121

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 1603-BLM7G1822S-20PBGYZTR-ND
Product Name RF FETs, MOSFETs
Package Type SOT-1212-3
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