Ampleon RF FETs, MOSFETs BLF7G24L-100,112

BLF7G24L-100 is a 100W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It features a flanged ceramic package (SOT502A) with two leads and two mounting holes, and has a drain-source breakdown voltage of 65 V, a maximum junction temperature of 200 °C, and a thermal resistance from junction to case of 0.3 K/W at 100 W. The device is internally matched, includes integrated ESD protection, and complies with the RoHS Directive 2002/95/EC. It supports a drain current of up to 28 A and demonstrates power gain of 18 dB, drain efficiency up to 27%, and adjacent channel power ratio of -46 dBc under IS-95 modulation. The transistor is rugged, with tested VSWR withstand up to 10:1 under class-AB operation.