Ampleon RF FETs, MOSFETs BLF6G05LS-200RN,11

BLF6G05LS-200RN is a 200W LDMOS power transistor designed for base station applications in the 460 MHz to 470 MHz frequency range. It is housed in an earless flanged LDMOST ceramic package (SOT502B) with dimensions of 20.02 mm by 9.53 mm by 19.94 mm. The device operates at a drain-source voltage of up to 65 V and a gate-source voltage of up to +13 V, with a maximum junction temperature of 225 °C. In class-AB operation at 28 V and 1400 mA quiescent current, it delivers 40 W average output power, 24 dB power gain, 33% drain efficiency, and -43 dBc adjacent channel power ratio. The transistor features integrated ESD protection, enhanced ruggedness to withstand VSWR up to 10:1, internal matching, and complies with RoHS Directive 2002/95/EC.