Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOU7S65

Description
N-Channel 600V 7A (Tc) 89W (Tc) Through Hole TO-251-3
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Description
N-Channel 600V 7A (Tc) 89W (Tc) Through Hole TO-251-3
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 785-1523-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1523-5-ND
Single FETs, MOSFETs 785-1523-5-ND
N-Channel 600V 7A (Tc) 89W (Tc) Through Hole TO-251-3

N-Channel 600V 7A (Tc) 89W (Tc) Through Hole TO-251-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU7S65 - 1017297-AOU7S65 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU7S65
1017297-AOU7S65
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU7S65 1017297-AOU7S65
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017297-AOU7S65 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 9.2nC @ 10V Max Input Capacitance: 434pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 77 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017297-AOU7S65
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251-3
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 9.2nC @ 10V
Max Input Capacitance: 434pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOU7S65 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOU7S65
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOU7S65
MOSFET N-CH 600V 7A TO251-3

MOSFET N-CH 600V 7A TO251-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1523-5-ND 1017297-AOU7S65 AOU7S65
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU7S65 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; TO-251-3 TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 600 volts
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