Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOU3N50

Description
N-Channel 500V 2.8A (Tc) 57W (Tc) Through Hole TO-251-3
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Description
N-Channel 500V 2.8A (Tc) 57W (Tc) Through Hole TO-251-3
Request a Quote Datasheet

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Single FETs, MOSFETs - 785-1176-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1176-5-ND
Single FETs, MOSFETs 785-1176-5-ND
N-Channel 500V 2.8A (Tc) 57W (Tc) Through Hole TO-251-3

N-Channel 500V 2.8A (Tc) 57W (Tc) Through Hole TO-251-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU3N50 - 1017292-AOU3N50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU3N50
1017292-AOU3N50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU3N50 1017292-AOU3N50
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017292-AOU3N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 57W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: TO-251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 331pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.5A, 10V Alternative Parts (Cross-Reference): STD3NK50Z-1; 2SK2616; NDD03N50Z-1G; Popularity: Medium Fake Threat In the Open Market: 94 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017292-AOU3N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: TO-251-3
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 8nC @ 10V
Max Input Capacitance: 331pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.5A, 10V
Alternative Parts (Cross-Reference): STD3NK50Z-1; 2SK2616; NDD03N50Z-1G;
Popularity: Medium
Fake Threat In the Open Market: 94 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOU3N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOU3N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOU3N50
MOSFET N-CH 500V 2.8A TO251-3

MOSFET N-CH 500V 2.8A TO251-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1176-5-ND 1017292-AOU3N50 AOU3N50
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU3N50 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; TO-251-3 TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 500 volts
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