Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOU2N60

Description
MOSFET N-CH 600V 2A TO251-3
Request a Quote Datasheet
Description
MOSFET N-CH 600V 2A TO251-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - AOU2N60 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
AOU2N60
Single FETs, MOSFETs AOU2N60
MOSFET N-CH 600V 2A TO251-3

MOSFET N-CH 600V 2A TO251-3

Supplier's Site Datasheet
Single FETs, MOSFETs - AOU2N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOU2N60-ND
Single FETs, MOSFETs AOU2N60-ND
N-Channel 600V 2A (Tc) 56.8W (Tc) Through Hole TO-251-3

N-Channel 600V 2A (Tc) 56.8W (Tc) Through Hole TO-251-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU2N60 - 1017290-AOU2N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU2N60
1017290-AOU2N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU2N60 1017290-AOU2N60
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017290-AOU2N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 56.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: TO-251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 325pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017290-AOU2N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 56.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: TO-251-3
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 325pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
600V 2A MOSFET Transistor
278-AOU2N60
600V 2A MOSFET Transistor 278-AOU2N60
MOSFET N-CH 600V 2A TO251-3 Product overview: AOU2N60 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOU2N60 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 2A TO251-3 Product overview: AOU2N60 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOU2N60 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOU2N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOU2N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOU2N60
MOSFET N-CH 600V 2A TO251-3

MOSFET N-CH 600V 2A TO251-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOU2N60 AOU2N60-ND 1017290-AOU2N60 278-AOU2N60 AOU2N60
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU2N60 600V 2A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 2000 milliamps
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