Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOTF7S65

Description
N-Channel 650V 7A (Tc) 35W (Tc) Through Hole TO-220F
Request a Quote Datasheet
Description
N-Channel 650V 7A (Tc) 35W (Tc) Through Hole TO-220F
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - AOTF7S65-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOTF7S65-ND
Single FETs, MOSFETs AOTF7S65-ND
N-Channel 650V 7A (Tc) 35W (Tc) Through Hole TO-220F

N-Channel 650V 7A (Tc) 35W (Tc) Through Hole TO-220F

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF7S65 - 1017288-AOTF7S65 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF7S65
1017288-AOTF7S65
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF7S65 1017288-AOTF7S65
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017288-AOTF7S65 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 9.2nC @ 10V Max Input Capacitance: 434pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 95 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017288-AOTF7S65
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 9.2nC @ 10V
Max Input Capacitance: 434pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 95 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOTF7S65 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOTF7S65
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOTF7S65
MOSFET N-CH 650V 7A TO220-3F

MOSFET N-CH 650V 7A TO220-3F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOTF7S65-ND 1017288-AOTF7S65 AOTF7S65
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF7S65 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220-3F TO-220; TO-220-3 Full Pack
V(BR)DSS 650 volts
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