Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 199115-AOTF2918
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 41W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 13A (Ta), 58A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 3430pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 58A TO220F Product overview: AOTF2918 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 58A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-AOTF2918 can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 199115-AOTF2918 | 285-AOTF2918 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF2918 | 100V 58A MOSFET Transistor |
| Polarity | N-Channel; N-Channel | N-Channel |
| V(BR)DSS | 100 volts | |
| PD | 2100 to 41000 milliwatts | 2100 milliwatts |