Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOTF11S60L

Description
N-Channel 600V 11A (Tc) 38W (Tc) Through Hole TO-220F
Request a Quote Datasheet
Description
N-Channel 600V 11A (Tc) 38W (Tc) Through Hole TO-220F
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - AOTF11S60L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOTF11S60L-ND
Single FETs, MOSFETs AOTF11S60L-ND
N-Channel 600V 11A (Tc) 38W (Tc) Through Hole TO-220F

N-Channel 600V 11A (Tc) 38W (Tc) Through Hole TO-220F

Buy Now Datasheet
Single FETs, MOSFETs - AOTF11S60L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
AOTF11S60L
Single FETs, MOSFETs AOTF11S60L
MOSFET N-CH 600V 11A TO220-3F

MOSFET N-CH 600V 11A TO220-3F

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF11S60L - 1017246-AOTF11S60L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF11S60L
1017246-AOTF11S60L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF11S60L 1017246-AOTF11S60L
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017246-AOTF11S60L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4.1V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 545pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 399 mOhm @ 3.8A, 10V Popularity: Medium Fake Threat In the Open Market: 92 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017246-AOTF11S60L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4.1V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 545pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 399 mOhm @ 3.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Singapore
600V 11A TO220 MOSFET Transistor
278-AOTF11S60L
600V 11A TO220 MOSFET Transistor 278-AOTF11S60L
MOSFET N-CH 600V 11A TO220-3F Product overview: AOTF11S60L from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOTF11S60L can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 11A TO220-3F Product overview: AOTF11S60L from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOTF11S60L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOTF11S60L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOTF11S60L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOTF11S60L
MOSFET N-CH 600V 11A TO220-3F

MOSFET N-CH 600V 11A TO220-3F

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOTF11S60L-ND AOTF11S60L 1017246-AOTF11S60L 278-AOTF11S60L AOTF11S60L
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF11S60L 600V 11A TO220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220-3F Tube TO-220; TO-220-3 Full Pack
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts 600 volts
IDSS 11000 milliamps
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