N-Channel 100V 8.2A (Ta), 60A (Tc) 2.6W (Ta), 150W (Tc) Through Hole TO-220
MOSFET N-CH 100V 8.2A/60A TO220
Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017218-AOT412
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.6W (Ta), 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8.2A (Ta), 60A (Tc)
Gate-Source Threshold Voltage: 3.8V @ 250μA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 3220pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 15.8 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 100V 8.2A/60A TO220
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 785-1241-5-ND | AOT412 | 1017218-AOT412 | AOT412 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT412 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3; TO-220 | TO-220; TO-220-3 |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 100 volts | 100 volts |
