Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOT412

Description
N-Channel 100V 8.2A (Ta), 60A (Tc) 2.6W (Ta), 150W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 100V 8.2A (Ta), 60A (Tc) 2.6W (Ta), 150W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 785-1241-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1241-5-ND
Single FETs, MOSFETs 785-1241-5-ND
N-Channel 100V 8.2A (Ta), 60A (Tc) 2.6W (Ta), 150W (Tc) Through Hole TO-220

N-Channel 100V 8.2A (Ta), 60A (Tc) 2.6W (Ta), 150W (Tc) Through Hole TO-220

Buy Now Datasheet
Single FETs, MOSFETs - AOT412 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
AOT412
Single FETs, MOSFETs AOT412
MOSFET N-CH 100V 8.2A/60A TO220

MOSFET N-CH 100V 8.2A/60A TO220

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT412 - 1017218-AOT412 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT412
1017218-AOT412
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT412 1017218-AOT412
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017218-AOT412 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.6W (Ta), 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 8.2A (Ta), 60A (Tc) Gate-Source Threshold Voltage: 3.8V @ 250μA Max Gate Charge: 54nC @ 10V Max Input Capacitance: 3220pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 15.8 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 81 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017218-AOT412
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.6W (Ta), 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8.2A (Ta), 60A (Tc)
Gate-Source Threshold Voltage: 3.8V @ 250μA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 3220pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 15.8 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOT412 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOT412
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOT412
MOSFET N-CH 100V 8.2A/60A TO220

MOSFET N-CH 100V 8.2A/60A TO220

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1241-5-ND AOT412 1017218-AOT412 AOT412
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT412 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220; TO-220-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts
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