Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT11S60L AOT11S60L

Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017170-AOT11S60L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 178W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4.1V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 545pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 399 mOhm @ 3.8A, 10V Popularity: Medium Fake Threat In the Open Market: 92 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
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Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017170-AOT11S60L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 178W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4.1V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 545pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 399 mOhm @ 3.8A, 10V Popularity: Medium Fake Threat In the Open Market: 92 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT11S60L - 1017170-AOT11S60L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT11S60L
1017170-AOT11S60L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT11S60L 1017170-AOT11S60L
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017170-AOT11S60L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 178W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4.1V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 545pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 399 mOhm @ 3.8A, 10V Popularity: Medium Fake Threat In the Open Market: 92 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017170-AOT11S60L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 178W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4.1V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 545pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 399 mOhm @ 3.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - 785-1250-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1250-5-ND
Single FETs, MOSFETs 785-1250-5-ND
N-Channel 600V 11A (Tc) 178W (Tc) Through Hole TO-220

N-Channel 600V 11A (Tc) 178W (Tc) Through Hole TO-220

Buy Now Datasheet
Singapore
600V 11A TO220 MOSFET Transistor
278-AOT11S60L
600V 11A TO220 MOSFET Transistor 278-AOT11S60L
MOSFET N-CH 600V 11A TO220 Product overview: AOT11S60L from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOT11S60L can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 11A TO220 Product overview: AOT11S60L from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOT11S60L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - AOT11S60L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
AOT11S60L
Single FETs, MOSFETs AOT11S60L
MOSFET N-CH 600V 11A TO220

MOSFET N-CH 600V 11A TO220

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOT11S60L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOT11S60L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOT11S60L
MOSFET N-CH 600V 11A TO220

MOSFET N-CH 600V 11A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1017170-AOT11S60L 785-1250-5-ND 278-AOT11S60L AOT11S60L AOT11S60L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT11S60L Single FETs, MOSFETs 600V 11A TO220 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts 600 volts
PD 178000 milliwatts 178000 milliwatts 178000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220 TO-220; TO-220-3 Tube TO-220; TO-220-3 TO-220; TO-220-3
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