Alpha & Omega Semiconductor, Ltd. FET, MOSFET Arrays AON5802B

Description
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 7.2A 1.6W Surface Mount 6-DFN-EP (2x5)
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Description
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 7.2A 1.6W Surface Mount 6-DFN-EP (2x5)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - AON5802B-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
AON5802B-ND
FET, MOSFET Arrays AON5802B-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 7.2A 1.6W Surface Mount 6-DFN-EP (2x5)

Mosfet Array 2 N-Channel (Dual) Common Drain 30V 7.2A 1.6W Surface Mount 6-DFN-EP (2x5)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON5802B - 108281-AON5802B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON5802B
108281-AON5802B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON5802B 108281-AON5802B
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 108281-AON5802B Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-DFN-EP (2x5) Maximum Power Dissipation: 1.6W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.2A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 1150pF @ 15V Maximum Rds On at Id,Vgs: 19 mOhm @ 7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 87 pct. Supply and Demand Status: Limited

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 108281-AON5802B
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DFN-EP (2x5)
Maximum Power Dissipation: 1.6W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.2A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 1150pF @ 15V
Maximum Rds On at Id,Vgs: 19 mOhm @ 7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 87 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AON5802B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AON5802B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AON5802B
MOSFET 2N-CH 30V 7.2A 6DFN

MOSFET 2N-CH 30V 7.2A 6DFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AON5802B-ND 108281-AON5802B AON5802B
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON5802B Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 6-WFDFN Exposed Pad SOT3; 6-DFN-EP (2x5)
Polarity N-Channel
V(BR)DSS 30 volts
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