Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AON2405

Description
P-Channel 20V 8A (Ta) 2.8W (Ta) Surface Mount 6-DFN (2x2)
Request a Quote Datasheet
Description
P-Channel 20V 8A (Ta) 2.8W (Ta) Surface Mount 6-DFN (2x2)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 785-1392-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1392-2-ND
Single FETs, MOSFETs 785-1392-2-ND
P-Channel 20V 8A (Ta) 2.8W (Ta) Surface Mount 6-DFN (2x2)

P-Channel 20V 8A (Ta) 2.8W (Ta) Surface Mount 6-DFN (2x2)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON2405 - 1017003-AON2405 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON2405
1017003-AON2405
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON2405 1017003-AON2405
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017003-AON2405 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-DFN-EP (2x2) Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 1025pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 32 mOhm @ 8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 85 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017003-AON2405
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DFN-EP (2x2)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 1025pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 32 mOhm @ 8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - AON2405 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
AON2405
Single FETs, MOSFETs AON2405
MOSFET P-CH 20V 8A 6DFN

MOSFET P-CH 20V 8A 6DFN

Supplier's Site Datasheet
Integrated Circuits (ICs) - Transistors - MOSFETs - AON2405 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
AON2405
Integrated Circuits (ICs) - Transistors - MOSFETs AON2405
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1392-2-ND 1017003-AON2405 AON2405 AON2405
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AON2405 Single FETs, MOSFETs Integrated Circuits (ICs) - Transistors - MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type 6-UDFN Exposed Pad SOT3; 6-DFN-EP (2x2) 6-UDFN Exposed Pad
V(BR)DSS 20 volts 20 volts
PD 2800 milliwatts 2800 milliwatts
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