AOM020V120X2Q is a 1200V silicon carbide power MOSFET in a TO-247-4L package, designed for high-efficiency switching in renewable energy, EV chargers, and industrial power systems. It features a typical on-resistance of 20 mΩ at 25°C, a pulsed drain current of 200 A, and a single-pulsed avalanche energy rating of 1.0 J. The device is 100% UIS tested and operates with a gate-source voltage range of -5 V to +15 V. Thermal characteristics include a junction-to-case thermal resistance of 0.34 to 0.43 °C/W and a maximum junction temperature of 175 °C. The part meets RoHS standards and is packaged in a tube format with a shipping quantity of 30 per tube.
1200V SILICON CARBIDE MOSFET
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 785-AOM020V120X2Q-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |