Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOK150V120X2Q

Description
1200V SILICON CARBIDE MOSFET
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Description
1200V SILICON CARBIDE MOSFET
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Datasheet
Datasheet Summary
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AOK150V120X2Q is a 1200 V silicon carbide power MOSFET in a TO-247-3L package, designed for automotive inverters, xEV chargers, and EVSE applications. It has a typical on-resistance of 150 mΩ at 25°C, a pulsed drain current of 40 A, and a single-pulsed avalanche energy of 180 mJ. The device is AEC-Q101 qualified and 100% UIS tested. Thermal resistance from junction to case is 1.3 °C/W, and junction and storage temperature range is -55 to 175 °C. Gate-source voltage is rated for continuous operation between -5 V and +15 V. Reverse recovery charge is 87.5 nC. The package dimensions and pin configuration conform to standard TO-247-3L footprint.

Datasheet Summary
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AOK150V120X2Q is a 1200 V silicon carbide power MOSFET in a TO-247-3L package, designed for automotive inverters, xEV chargers, and EVSE applications. It has a typical on-resistance of 150 mΩ at 25°C, a pulsed drain current of 40 A, and a single-pulsed avalanche energy of 180 mJ. The device is AEC-Q101 qualified and 100% UIS tested. Thermal resistance from junction to case is 1.3 °C/W, and junction and storage temperature range is -55 to 175 °C. Gate-source voltage is rated for continuous operation between -5 V and +15 V. Reverse recovery charge is 87.5 nC. The package dimensions and pin configuration conform to standard TO-247-3L footprint.

Suppliers

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Product
Description
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Single FETs, MOSFETs - 785-AOK150V120X2Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-AOK150V120X2Q-ND
Single FETs, MOSFETs 785-AOK150V120X2Q-ND
1200V SILICON CARBIDE MOSFET

1200V SILICON CARBIDE MOSFET

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 785-AOK150V120X2Q-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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