Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOK033V120X2Q

Description
1200V SILICON CARBIDE MOSFET
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Description
1200V SILICON CARBIDE MOSFET
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Datasheet
Datasheet Summary
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AOK033V120X2Q is a 1200 V silicon carbide power MOSFET in a TO-247-3L package, designed for automotive inverters, EV chargers, and motor drives. It has a typical on-resistance of 33 mΩ at 25°C, a pulsed drain current of 120 A, and a maximum junction temperature of 175°C. The device is AEC-Q101 qualified and features low reverse recovery charge of 226 nC, a gate-source voltage range of -5 V to +15 V, and a junction-to-case thermal resistance of 0.5 °C/W. It is 100% UIS tested and supports gate drive voltages optimized at 15 V.

Datasheet Summary
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AOK033V120X2Q is a 1200 V silicon carbide power MOSFET in a TO-247-3L package, designed for automotive inverters, EV chargers, and motor drives. It has a typical on-resistance of 33 mΩ at 25°C, a pulsed drain current of 120 A, and a maximum junction temperature of 175°C. The device is AEC-Q101 qualified and features low reverse recovery charge of 226 nC, a gate-source voltage range of -5 V to +15 V, and a junction-to-case thermal resistance of 0.5 °C/W. It is 100% UIS tested and supports gate drive voltages optimized at 15 V.

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Single FETs, MOSFETs - 785-AOK033V120X2Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-AOK033V120X2Q-ND
Single FETs, MOSFETs 785-AOK033V120X2Q-ND
1200V SILICON CARBIDE MOSFET

1200V SILICON CARBIDE MOSFET

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 785-AOK033V120X2Q-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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