Alliance Memory, Inc. Memory AS6C4016A-55BINTR

Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x8)
Datasheet
Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS6C4016A-55BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x8)

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 48TFBGA

IC SRAM 4MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS6C4016A-55BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS6C4016A-55BINTR
Integrated Circuits (ICs) - Memory - Memory AS6C4016A-55BINTR
IC SRAM 4MBIT PARALLEL 48TFBGA

IC SRAM 4MBIT PARALLEL 48TFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS6C4016A-55BINTR AS6C4016A-55BINTR AS6C4016A-55BINTR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 55 ns 55 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits
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