Alliance Memory, Inc. Memory AS4C8M32SA-6BINTR

Description
SDRAM Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C8M32SA-6BINTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-TFBGA (8x13)

SDRAM Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - AS4C8M32SA-6BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)

SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C8M32SA-6BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C8M32SA-6BINTR
Integrated Circuits (ICs) - Memory AS4C8M32SA-6BINTR
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C8M32SA-6BINTR-ND AS4C8M32SA-6BINTR AS4C8M32SA-6BINTR AS4C8M32SA-6BINTR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 90-TFBGA BGA; 90-TFBGA BGA
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