Alliance Memory, Inc. Memory AS4C8M32S-6BIN

Description
SDRAM Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 1450-1163-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-TFBGA (8x13)

SDRAM Memory IC 256Mb (8M x 32) Parallel 166MHz 5ns 90-TFBGA (8x13)

Buy Now Datasheet
SDRAM,256M,3.3V,166MHz,8M x 32,90 ball LFBGA - AS4C8M32S-6BIN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SDRAM,256M,3.3V,166MHz,8M x 32,90 ball LFBGA
AS4C8M32S-6BIN
SDRAM,256M,3.3V,166MHz,8M x 32,90 ball LFBGA AS4C8M32S-6BIN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Memory - AS4C8M32S-6BIN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)

SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 90-TFBGA (8x13)

Buy Now
Integrated Circuits (ICs) - Memory - AS4C8M32S-6BIN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C8M32S-6BIN
Integrated Circuits (ICs) - Memory AS4C8M32S-6BIN
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Karl Kruse GmbH & Co. KG Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1450-1163-ND AS4C8M32S-6BIN AS4C8M32S-6BIN AS4C8M32S-6BIN AS4C8M32S-6BIN
Product Name Memory SDRAM,256M,3.3V,166MHz,8M x 32,90 ball LFBGA Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 90-TFBGA 90 ball LFBGA BGA; 90-TFBGA BGA
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