Alliance Memory, Inc. Memory AS4C8M16S-7BCN

Description
IC DRAM 128MBIT PARALLEL 54TFBGA
Datasheet
Description
IC DRAM 128MBIT PARALLEL 54TFBGA
Datasheet

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Product
Description
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IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - AS4C8M16S-7BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)

SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)

Buy Now Datasheet
SDRAM,128M,3.3V,143MHz,8M x 16,54ball TFBGA - AS4C8M16S-7BCN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SDRAM,128M,3.3V,143MHz,8M x 16,54ball TFBGA
AS4C8M16S-7BCN
SDRAM,128M,3.3V,143MHz,8M x 16,54ball TFBGA AS4C8M16S-7BCN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C8M16S-7BCN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C8M16S-7BCN
Integrated Circuits (ICs) - Memory AS4C8M16S-7BCN
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Karl Kruse GmbH & Co. KG Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C8M16S-7BCN AS4C8M16S-7BCN AS4C8M16S-7BCN AS4C8M16S-7BCN
Product Name Memory Memory SDRAM,128M,3.3V,143MHz,8M x 16,54ball TFBGA Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip DRAM Chip Volatile; DRAM Chip
Access Time 5.4 ns 5.4 ns 5.4 ns
Density 128000 kbits 128000 kbits 128000 kbits
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
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