IC DRAM 128MBIT PARALLEL 54FBGA Product overview: AS4C8M16MSA-6BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C8M16MSA-6BIN
Category: DRAM
Win Source Part Number: 1447431-AS4C8M16MSA-
Manufacturer: Alliance Memory, Inc.
SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5 ns 54-FBGA (8x8)
IC DRAM 128MBIT PARALLEL 54FBGA
IC DRAM 128MBIT PARALLEL 54FBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-AS4C8M16MSA-6BIN | 1447431-AS4C8M16MSA-6BIN | AS4C8M16MSA-6BIN | AS4C8M16MSA-6BIN | AS4C8M16MSA-6BIN |
| Product Name | Memory IC and Storage Component | DRAM | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5 ns | 5 ns | 5 ns | 5 ns | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Address Bus Width | 16 bits | ||||
| Package Type | BGA; Tray | BGA; 54-VFBGA | BGA |
