Alliance Memory, Inc. Memory AS4C64M16MD1A-5BINTR

Description
SDRAM - Mobile LPDDR Memory IC 1Gb (64M x 16) Parallel 200MHz 5ns 60-FBGA (8x9)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR Memory IC 1Gb (64M x 16) Parallel 200MHz 5ns 60-FBGA (8x9)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C64M16MD1A-5BINTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR Memory IC 1Gb (64M x 16) Parallel 200MHz 5ns 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 1Gb (64M x 16) Parallel 200MHz 5ns 60-FBGA (8x9)

Buy Now Datasheet
Memory - AS4C64M16MD1A-5BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-FBGA (8x9)

SDRAM - Mobile LPDDR Memory IC 1Gbit Parallel 200 MHz 5 ns 60-FBGA (8x9)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C64M16MD1A-5BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C64M16MD1A-5BINTR
Integrated Circuits (ICs) - Memory AS4C64M16MD1A-5BINTR
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS4C64M16MD1A-5BINTR-ND AS4C64M16MD1A-5BINTR AS4C64M16MD1A-5BINTR AS4C64M16MD1A-5BINTR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 60-VFBGA BGA; 60-VFBGA BGA
Supply Voltage 1.7V ~ 1.95V 1.7V ~ 1.95V 1.7V ~ 1.95V
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882561 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - PAL16H42AJ/883 - Quarktwin Technology Ltd.
Texas Instruments
View Details
2 suppliers
Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 29705ADM/B - Quarktwin Technology Ltd.
Rochester Electronics
View Details
3 suppliers