Alliance Memory, Inc. Memory AS4C512M8D4-83BCNTR

Description
SDRAM - DDR4 Memory IC 4Gbit POD 1.2 GHz 18 ns 78-FBGA (7.5x10.6)
Datasheet
Description
SDRAM - DDR4 Memory IC 4Gbit POD 1.2 GHz 18 ns 78-FBGA (7.5x10.6)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AS4C512M8D4-83BCNTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 4Gbit POD 1.2 GHz 18 ns 78-FBGA (7.5x10.6)

SDRAM - DDR4 Memory IC 4Gbit POD 1.2 GHz 18 ns 78-FBGA (7.5x10.6)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AS4C512M8D4-83BCNTR
Integrated Circuits (ICs) - Memory - Memory AS4C512M8D4-83BCNTR
MEMORY

MEMORY

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number AS4C512M8D4-83BCNTR AS4C512M8D4-83BCNTR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 18 ns
Operating Temperature 0 to 95 C (32 to 203 F)
Density 4000000 kbits 4000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8869002LA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 120 ns
Density 4 kbits
View Details
Memory - AS4SD2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 16000 kbits
View Details