Alliance Memory, Inc. Memory AS4C512M8D3LB-12BCN

Description
IC DRAM 4GBIT PARALLEL 78FBGA
Datasheet
Description
IC DRAM 4GBIT PARALLEL 78FBGA
Datasheet

Suppliers

Company
Product
Description
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IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Memory - AS4C512M8D3LB-12BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)

SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - AS4C512M8D3LB-12BCN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C512M8D3LB-12BCN
Integrated Circuits (ICs) - Memory AS4C512M8D3LB-12BCN
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AS4C512M8D3LB-12BCN AS4C512M8D3LB-12BCN AS4C512M8D3LB-12BCN
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Density 4000000 kbits 4000000 kbits 4000000 kbits
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
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