Win Source Part Number: 1013496-AS4C512M8D3L
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 220
Mounting: SMD (SMT)
Technology: SDRAM - DDR3L
Memory Type: Volatile
Memory Size: 4Gb (512M x 8)
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x10.5)
Temperature Range - Operating: -40°C ~ 95°C (TC)
Memory Format: DRAM
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
Mfr: Alliance Memory, Inc.
Other Names: 1450-1109
IC DRAM 4GBIT PARALLEL 78FBGA Product overview: AS4C512M8D3L-12BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-AS4C512M8D3L-12B
IC DRAM 4GBIT PARALLEL 78FBGA
IC DRAM 4GBIT PARALLEL 78FBGA
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SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 ns 78-FBGA (9x10.5)
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Karl Kruse GmbH & Co. KG | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1013496-AS4C512M8D3L-12BIN | 774-AS4C512M8D3L-12BIN | AS4C512M8D3L-12BIN | AS4C512M8D3L-12BIN | AS4C512M8D3L-12BIN | AS4C512M8D3L-12BIN |
| Product Name | Integrated Circuits (ICs) - Memory | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | DDR3 SDRAM,4G,512M x 81.35V,78-ball FBGA | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns | |
| Cycle Time | 15 ns | 15 ns | ||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) |
